SOT-363 Plastic-Encapsulate Transistors

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Frida Jeppesen
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1 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMZ2N DUAL TRANSISTOR (PNP+NPN) FEATURES Both 2SA37AK and 2SC242K chip in a package Transistor elements are independent, eliminating interference Mounting cost and area be cut in half SOT-363 Marking: Z2 Absolute maximum ratings (Ta) Symbol Parameter Tr Limits Tr2 Units V CBO Collector-Base Voltage V O Collector-Emitter Voltage - V V EBO Emitter-Base Voltage -6 7 V Collector Current - ma Collector Power Dissipation mw T J Junction Temperature T stg Storage Temperature -55- ELECTRICAL CHARACTERISTICS (Ta unless otherwise specified) Tr (PNP) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO =-μa, I E =0-60 V Collector-emitter breakdown voltage V (BR)CEO =-ma, I B =0 - V Emitter-base breakdown voltage V (BR)EBO I E =-μa, =0-6 V Collector cut-off current BO V CB =-60V, I E =0-0. μa Emitter cut-off current I EBO V EB =-6V, =0-0. μa DC current gain h FE =-6V, =-ma Collector-emitter saturation voltage (sat) =-ma, I B =-5mA -0.5 V Transition frequency f T =-2V, I E =2mA, f=mhz 40 MHz Collector output capacitance V CB =-2V, I E =0, f=mhz 5 pf Rev. -.0

2 Tr2 (NPN) Parameter Symbol Test conditions Min T yp Max Unit Collector-base breakdown voltage V (BR)CBO =μa, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO =ma, I B =0 V Emitter-base breakdown voltage V (BR)EBO I E =μa, =0 7 V Collector cut-off current BO V CB =60V, I E =0 0. μa Emitter cut-off current I EBO V EB =7V, =0 0. μa DC current gain h FE =6V, =ma Collector-emitter saturation voltage (sat) =ma, I B =5mA 0.4 V Transition frequency f T =2V, I E =-2mA, f=mhz 80 MHz Collector output capacitance V CB =2V, I E =0, f=mhz 3.5 pf 2 Rev. -.0

3 Typical Characteristics UMZ2N (NPN) Static Characteristic 20uA COMMON 8uA EMITTER 6uA 4uA 2uA ua 8uA 6uA 4uA I B =2uA COLLECTOR-EMITTER VOLTAGE DC CURRENT GAIN h FE h FE = 0. = 6V V BEsat 300 sat BASE-EMITTER SATURATION VOLTAGE V BEsat (mv) = COLLECTOR-EMITTER SATURATION VOLTAGE sat (mv) = β= COLLECTOR CURREMT β= 0. COLLECTOR CURREMT V BE 0 f T = BASE-EMMITER VOLTAGE V BE =6V TRANSITION FREQUENCY f T (MHz) 0.3 =2V CAPACITANCE C (pf) /C ib C ib V CB /V EB f=mhz I E =0/ =0 =25 COLLECTOR POWER DISSIPATION (mw) REVERSE VOLTAGE V AMBIENT TEMPERATURE ( ) 3 Rev. -.0

4 Typical Characteristics UMZ2N (PNP) Static Characteristic -20uA -8uA -6uA -4uA -2uA -ua COMMON EMITTER -8uA -6uA -4uA DC CURRENT GAIN h FE h FE = I B =-2uA COLLECTOR-EMITTER VOLTAGE =-6V V BEsat - sat BASE-EMITTER SATURATION VOLTAGE V BE (sat) (mv) = COLLECTOR-EMITTER SATURATION VOLTAGE sat (mv) - = β= β= V BE f T - - = =-6V TRANSITION FREQUENCY f T (MHz) = -2V BASE-EMMITER VOLTAGE V BE OUTPUT CAPACITANCE / C ib (pf) / C ib C ib V CB / V EB f=mhz I E =0/ =0 COLLECTOR POWER DISSIPATION (mw) COLLECTOR-BASE VOLTAGE V CB / V EB AMBIENT TEMPERATURE ( ) 4 Rev. -.0

5 SOT-363 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A A A b c D E E e 0.6 TYP TYP e L REF 0.02 REF L θ SOT-363 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. 5 Rev. -.0

6 SOT-363 Tape and Reel 6 Rev. -.0

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