MOSFET IPN50R2K0CE. 500VCoolMOSªCEPowerTransistor

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1 MOSFET CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. PGSOT223 Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications Adapter,ChargerandLighting Gate Pin Drain Pin 2 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. TableKeyPerformanceParameters Parameter Value Unit Tj,max V RDS(on),max 2 Ω ID 3.6 A Qg.typ 6 nc ID,pulse 6. A Eoss@4V.62 µj Type/OrderingCode Package Marking RelatedLinks PGSOT223 S2K see Appendix A Rev.2.,2663

2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer Rev.2.,2663

3 Maximumratings attj=2 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current ) ID A TC = 2 C TC = C Pulsed drain current 2) ID,pulse 6. A TC = 2 C Avalanche energy, single pulse EAS 34 mj ID =.8A; VDD = V Avalanche energy, repetitive EAR. mj ID =.8A; VDD = V Avalanche current, repetitive IAR.8 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=...4V Gate source voltage VGS V static; AC (f> Hz) Power dissipation Ptot. W TC=2 C Operating and storage temperature Tj,Tstg 4 C Continuous diode forward current IS. A TC=2 C Diode pulse current 2) IS,pulse 6. A TC = 2 C Reverse diode dv/dt 3) dv/dt V/ns VDS=...4V,ISD<=IS,Tj=2 C, tcond<2µs Maximum diode commutation speed 3) dif/dt A/µs VDS=...4V,ISD<=IS,Tj=2 C, tcond<2µs 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction solder point Thermal resistance, junction ambient for minimal footprint Thermal resistance, junction ambient soldered on copper area Soldering temperature, wavesoldering only allowed at leads RthJS 2 C/W RthJA 6 C/W minimal footprint RthJA 7 C/W Tsold 26 C reflow MSL3 Device on 4mm*4mm*. epoxy PCB FR4 with 6cm 2 (one layer 7µm thick) copper area for drain connection and cooling. PCB is vertical without blown air. ) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=. 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 3 Rev.2.,2663

4 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS V VGS=V,ID=mA Gate threshold voltage VGS(th) V VDS=VGS,ID=.mA Zero gate voltage drain current IDSS µa VDS=V,VGS=V,Tj=2 C VDS=V,VGS=V,Tj= C Gatesource leakage curent IGSS na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=3V,ID=.6A,Tj=2 C VGS=3V,ID=.6A,Tj= C Gate resistance RG 7 Ω f=mhz,opendrain TableDynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 24 pf VGS=V,VDS=V,f=MHz Output capacitance Coss 9 pf VGS=V,VDS=V,f=MHz Effective output capacitance, energy related ) Co(er) 8 pf VGS=V,VDS=...4V Effective output capacitance, time related 2) Co(tr) 26 pf ID=constant,VGS=V,VDS=...4V Turnon delay time td(on) 6 ns Rise time tr ns Turnoff delay time td(off) 2 ns Fall time tf 38 ns VDD=4V,VGS=3V,ID=.8A, RG=.3Ω VDD=4V,VGS=3V,ID=.8A, RG=.3Ω VDD=4V,VGS=3V,ID=.8A, RG=.3Ω VDD=4V,VGS=3V,ID=.8A, RG=.3Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs.7 nc VDD=4V,ID=.8A,VGS=toV Gate to drain charge Qgd 3. nc VDD=4V,ID=.8A,VGS=toV Gate charge total Qg 6 nc VDD=4V,ID=.8A,VGS=toV Gate plateau voltage Vplateau.4 V VDD=4V,ID=.8A,VGS=toV ) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto4V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto4V 4 Rev.2.,2663

5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.83 V VGS=V,IF=.8A,Tf=2 C Reverse recovery time trr ns VR=4V,IF=.8A,diF/dt=A/µs Reverse recovery charge Qrr.3 µc VR=4V,IF=.8A,diF/dt=A/µs Peak reverse recovery current Irrm.2 A VR=4V,IF=.8A,diF/dt=A/µs Rev.2.,2663

6 4Electricalcharacteristicsdiagrams Diagram:Powerdissipation 6 Diagram2:Safeoperatingarea µs µs 4 µs ms Ptot[W] 3 ID[A] DC ms TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=2 C;D=;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 µs µs µs..2 ms. ID[A] DC ms ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 6 Rev.2.,2663

7 Diagram:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V V V V 8 V 8 V V ID[A] 3 7 V ID[A] V 2 6 V. V V 4. V 2 VDS[V] ID=f(VDS);Tj=2 C;parameter:VGS.. V. V. 4. V. 2 VDS[V] ID=f(VDS);Tj=2 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 6. V 6 V 7 V. V 6. V. Diagram8:Drainsourceonstateresistance 6. 4 RDS(on)[Ω] 4. V RDS(on)[Ω] 3 98% typ ID[A] RDS(on)=f(ID);Tj=2 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=.6A;VGS=3V 7 Rev.2.,2663

8 Diagram9:Typ.transfercharacteristics 7 Diagram:Typ.gatecharge 6 2 C V V ID[A] 3 C VGS[V] VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=.8Apulsed;parameter:VDD Diagram:Forwardcharacteristicsofreversediode 2 2 C 2 C Diagram2:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=.8A;VDD=V 8 Rev.2.,2663

9 Diagram3:Drainsourcebreakdownvoltage 8 Diagram4:Typ.capacitances VBR(DSS)[V] 2 C[pF] 2 Ciss 48 Coss 46 Crss Tj[ C] VBR(DSS)=f(Tj);ID=mA VDS[V] C=f(VDS);VGS=V;f=MHz Diagram:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 9 Rev.2.,2663

10 TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g = R g 2 I rrm Q F Q S di rr / dt %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS % t d(on) t r t d(off) t f t on t off TableUnclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D Rev.2.,2663

11 6PackageOutlines DOCUMENT NO. Z8B83 DIM MILLIMETERS INCHES MIN MAX MIN MAX A A..4 A2, b b c D E E e e L N O BASIC 4.6 BASIC.9 BASIC.8 BASIC SCALE 2. EUROPEAN PROJECTION 2. ISSUE DATE REVISION mm FigureOutlinePGSOT223,dimensionsinmm/inches Rev.2.,2663

12 7AppendixA TableRelatedLinks IFXCoolMOSWebpage: IFXDesigntools: 2 Rev.2.,2663

13 RevisionHistory Revision:2663,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) Release of final version Updated ID ratings TrademarksofInfineonTechnologiesAG AURIX,C66,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust2 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 8726München,Germany 26InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 3 Rev.2.,2663