JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMZ2N DUAL TRANSISTOR (PNP+NPN) FEATURES Both 2SA37AK and 2SC242K chip in a package Transistor elements are independent, eliminating interference Mounting cost and area be cut in half SOT-363 Marking: Z2 Absolute maximum ratings (Ta) Symbol Parameter Tr Limits Tr2 Units V CBO Collector-Base Voltage -60 60 V O Collector-Emitter Voltage - V V EBO Emitter-Base Voltage -6 7 V Collector Current - ma Collector Power Dissipation mw T J Junction Temperature T stg Storage Temperature -55- ELECTRICAL CHARACTERISTICS (Ta unless otherwise specified) Tr (PNP) Parameter Symbol Test conditions M in Typ Max Unit Collector-base breakdown voltage V (BR)CBO =-μa, I E =0-60 V Collector-emitter breakdown voltage V (BR)CEO =-ma, I B =0 - V Emitter-base breakdown voltage V (BR)EBO I E =-μa, =0-6 V Collector cut-off current BO V CB =-60V, I E =0-0. μa Emitter cut-off current I EBO V EB =-6V, =0-0. μa DC current gain h FE =-6V, =-ma 20 560 Collector-emitter saturation voltage (sat) =-ma, I B =-5mA -0.5 V Transition frequency f T =-2V, I E =2mA, f=mhz 40 MHz Collector output capacitance V CB =-2V, I E =0, f=mhz 5 pf Rev. -.0
Tr2 (NPN) Parameter Symbol Test conditions Min T yp Max Unit Collector-base breakdown voltage V (BR)CBO =μa, I E =0 60 V Collector-emitter breakdown voltage V (BR)CEO =ma, I B =0 V Emitter-base breakdown voltage V (BR)EBO I E =μa, =0 7 V Collector cut-off current BO V CB =60V, I E =0 0. μa Emitter cut-off current I EBO V EB =7V, =0 0. μa DC current gain h FE =6V, =ma 20 560 Collector-emitter saturation voltage (sat) =ma, I B =5mA 0.4 V Transition frequency f T =2V, I E =-2mA, f=mhz 80 MHz Collector output capacitance V CB =2V, I E =0, f=mhz 3.5 pf 2 Rev. -.0
Typical Characteristics UMZ2N (NPN) 8 6 4 2 Static Characteristic 20uA COMMON 8uA EMITTER 6uA 4uA 2uA ua 8uA 6uA 4uA I B =2uA 0 0 2 4 6 8 2 COLLECTOR-EMITTER VOLTAGE DC CURRENT GAIN h FE h FE = 0. = 6V V BEsat 300 sat BASE-EMITTER SATURATION VOLTAGE V BEsat (mv) 800 600 = COLLECTOR-EMITTER SATURATION VOLTAGE sat (mv) = β= 400 0. COLLECTOR CURREMT β= 0. COLLECTOR CURREMT V BE 0 f T = 0.0 0.3 0.6 0.9.2 BASE-EMMITER VOLTAGE V BE =6V TRANSITION FREQUENCY f T (MHz) 0.3 =2V CAPACITANCE C (pf) /C ib C ib V CB /V EB f=mhz I E =0/ =0 =25 COLLECTOR POWER DISSIPATION (mw) 200 0. 0. REVERSE VOLTAGE V 20 0 0 25 75 25 AMBIENT TEMPERATURE ( ) 3 Rev. -.0
Typical Characteristics UMZ2N (PNP) -5-4 -3-2 - Static Characteristic -20uA -8uA -6uA -4uA -2uA -ua COMMON EMITTER -8uA -6uA -4uA DC CURRENT GAIN h FE h FE = I B =-2uA -0-0 -2-4 -6-8 - -2 COLLECTOR-EMITTER VOLTAGE =-6V -0. - - - - - V BEsat - sat BASE-EMITTER SATURATION VOLTAGE V BE (sat) (mv) -800-600 = COLLECTOR-EMITTER SATURATION VOLTAGE sat (mv) - = β= -400-0. - - - - β= - -0. - - - - - - V BE f T - - = =-6V TRANSITION FREQUENCY f T (MHz) = -2V -0. -0.0-0.2-0.4-0.6-0.8 -.0 -.2 BASE-EMMITER VOLTAGE V BE -0.5 - - -70 OUTPUT CAPACITANCE / C ib (pf) / C ib C ib V CB / V EB f=mhz I E =0/ =0 COLLECTOR POWER DISSIPATION (mw) 200 0. -0. - - COLLECTOR-BASE VOLTAGE V CB / V EB -20 0 0 25 75 25 AMBIENT TEMPERATURE ( ) 4 Rev. -.0
SOT-363 Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900. 0.035 0.043 A 0.000 0. 0.000 0.004 A2 0.900.000 0.035 0.039 b 0. 0.3 0.006 0.04 c 0. 0. 0.004 0.006 D 2.000 2.200 0.079 0.087 E..3 0.045 0.053 E 2. 2.400 0.085 0.094 e 0.6 TYP 0.026 TYP e.200.400 0.047 0.055 L 0.525 REF 0.02 REF L 0.260 0.460 0.0 0.08 θ 0 8 0 8 SOT-363 Suggested Pad Layout NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. 5 Rev. -.0
SOT-363 Tape and Reel 6 Rev. -.0