MOSFET CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. PGSOT223 Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications Adapter,ChargerandLighting Gate Pin 1 Drain Pin 2 Source Pin 3 Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseperatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj,max 7 V RDS(on),max 1.5 Ω Qg,typ 1.5 nc ID,pulse 9.2 A Eoss@4V 1.2 µj Body diode di/dt 5 A/µs Type/OrderingCode Package Marking RelatedLinks PGSOT223 65S1K5 see Appendix A 1
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Test Circuits........................................................................... 1 Package Outlines....................................................................... 11 Appendix A............................................................................ 12 Revision History........................................................................ 13 Trademarks........................................................................... 13 Disclaimer............................................................................ 13 2
1Maximumratings attj=25 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID 5.2 3.3 A TC = 25 C TC = 1 C Pulsed drain current 2) ID,pulse 9.2 A TC = 25 C Avalanche energy, single pulse EAS 26 mj ID =.6A; VDD = 5V Avalanche energy, repetitive EAR.1 mj ID =.6A; VDD = 5V Avalanche current, repetitive IAR.6 A MOSFET dv/dt ruggedness dv/dt 5 V/ns VDS=...48V Gate source voltage VGS 2 3 2 3 V static; AC (f>1 Hz) Power dissipation Ptot 5. W TC=25 C Operating and storage temperature Tj,Tstg 4 15 C Continuous diode forward current IS 1.2 A TC=25 C Diode pulse current 2) IS,pulse 9.2 A TC = 25 C Reverse diode dv/dt 3) dv/dt 15 V/ns VDS=...4V,ISD<=IS,Tj=25 C Maximum diode commutation speed 3) dif/dt 5 A/µs VDS=...4V,ISD<=IS,Tj=25 C 2Thermalcharacteristics Table3Thermalcharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction solder point Thermal resistance, junction ambient for minimal footprint Thermal resistance, junction ambient soldered on copper area Soldering temperature, wavesoldering only allowed at leads RthJS 23.8 C/W RthJA 16 C/W minimal footprint RthJA 75 C/W Tsold 26 C reflow MSL3 Device on 4mm*4mm*1.5 epoxy PCB FR4 with 6cm 2 (one layer 7µm thick) copper area for drain connection and cooling. PCB is vertical without blown air. 1) DPAK equivalent. Limited by Tj max. Maximum duty cycle D=.5 2) Pulse width tp limited by Tj,max 3) VDClink=4V;VDS,peak<V(BR)DSS;identicallowsideandhighsideswitchwithidenticalRG 3
3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 65 V VGS=V,ID=1mA Gate threshold voltage VGS(th) 2.5 3 3.5 V VDS=VGS,ID=.1mA Zero gate voltage drain current IDSS 1 1 µa VDS=65V,VGS=V,Tj=25 C VDS=65V,VGS=V,Tj=15 C Gatesource leakage curent IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) 1.35 3.51 1.5 Ω VGS=1V,ID=1A,Tj=25 C VGS=1V,ID=1A,Tj=15 C Gate resistance RG 6.5 Ω f=1mhz,opendrain Table5Dynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 225 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 15 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 1 pf VGS=V,VDS=...48V Effective output capacitance, time related 2) Co(tr) 42 pf ID=constant,VGS=V,VDS=...48V Turnon delay time td(on) 7.7 ns Rise time tr 5.9 ns Turnoff delay time td(off) 33 ns Fall time tf 18.2 ns VDD=4V,VGS=13V,ID=1.5A, RG=1.2Ω VDD=4V,VGS=13V,ID=1.5A, RG=1.2Ω VDD=4V,VGS=13V,ID=1.5A, RG=1.2Ω VDD=4V,VGS=13V,ID=1.5A, RG=1.2Ω Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 1.3 nc VDD=48V,ID=1.5A,VGS=to1V Gate to drain charge Qgd 5.8 nc VDD=48V,ID=1.5A,VGS=to1V Gate charge total Qg 1.5 nc VDD=48V,ID=1.5A,VGS=to1V Gate plateau voltage Vplateau 5.4 V VDD=48V,ID=1.5A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto48V 2) Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfromto48V 4
Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=1.5A,Tf=25 C Reverse recovery time trr 2 ns VR=4V,IF=1.5A,diF/dt=1A/µs Reverse recovery charge Qrr.9 µc VR=4V,IF=1.5A,diF/dt=1A/µs Peak reverse recovery current Irrm 8 A VR=4V,IF=1.5A,diF/dt=1A/µs 5
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation 6 Diagram2:Safeoperatingarea 1 1 1 µs 1 µs 5 1 µs 1 4 1 ms Ptot[W] 3 ID[A] 1 1 DC 1 ms 2 1 2 1 25 5 75 1 125 15 TC[ C] Ptot=f(TC) 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=25 C;D=;parameter:tp Diagram3:Safeoperatingarea 1 1 Diagram4:Max.transientthermalimpedance 1 2 1 µs 1 µs 1 µs.5 1 1 ms 1 1.2.1 ID[A] 1 1 DC 1 ms ZthJC[K/W] 1.5.2.1 1 2 1 1 single pulse 1 3 1 1 1 1 2 1 3 VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp 1 2 1 5 1 4 1 3 1 2 1 1 1 1 1 tp[s] ZthJC=f(tP);parameter:D=tp/T 6
Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 12 7 1 2 V 6 2 V 1 V 8 V 8 1 V 8 V 5 7 V 4 ID[A] 6 7 V ID[A] 3 6 V 4 6 V 2 5.5 V 5 V 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=25 C;parameter:VGS 5.5 V 2 5 V 1 4.5 V 5 1 15 2 VDS[V] ID=f(VDS);Tj=125 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance 9. RDS(on)[Ω] 8.5 8. 5 V 6 V 7 V 7.5 5.5 V 6.5 V 7. 6.5 6. 5.5 5. 4.5 4. 3.5 1 V 3. 2.5 2. 1.5 1..5. 2 4 6 8 ID[A] RDS(on)=f(ID);Tj=125 C;parameter:VGS Diagram8:Drainsourceonstateresistance RDS(on)[Ω] 4. 3.5 3. 2.5 2. 1.5 1..5. 5 25 25 5 75 1 125 15 Tj[ C] RDS(on)=f(Tj);ID=1.A;VGS=1V 98% typ 7
Diagram9:Typ.transfercharacteristics 1 Diagram1:Typ.gatecharge 1 9 25 C 9 8 8 12 V 7 7 48 V 6 6 ID[A] 5 4 15 C VGS[V] 5 4 3 3 2 2 1 1 2 4 6 8 1 12 VGS[V] ID=f(VGS);VDS=2V;parameter:Tj 1 2 3 4 5 6 7 8 9 1 11 12 Qgate[nC] VGS=f(Qgate);ID=1.5Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode 1 2 25 C 125 C Diagram12:Avalancheenergy 3 25 1 1 2 IF[A] EAS[mJ] 15 1 1 5 1 1..5 1. 1.5 2. VSD[V] IF=f(VSD);parameter:Tj 25 5 75 1 125 15 Tj[ C] EAS=f(Tj);ID=.6A;VDD=5V 8
Diagram13:Drainsourcebreakdownvoltage 75 Diagram14:Typ.capacitances 1 4 73 71 1 3 69 Ciss 67 1 2 VBR(DSS)[V] 65 63 C[pF] 1 1 Coss 61 Crss 59 1 57 55 75 5 25 25 5 75 1 125 15 175 Tj[ C] VBR(DSS)=f(Tj);ID=1mA 1 1 1 2 3 4 5 6 7 VDS[V] C=f(VDS);VGS=V;f=1MHz Diagram15:Typ.Cossstoredenergy 2.5 2. 1.5 Eoss[µJ] 1..5. 1 2 3 4 5 6 7 VDS[V] Eoss=f(VDS) 9
5TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 1
6PackageOutlines DOCUMENT NO. Z8B18553 DIM MILLIMETERS INCHES MIN MAX MIN MAX A 1.52 1.8.6.71 A1.1.4 A2 1,5 1.7.59.67 b.6.8.31 b2 2.95 3.1.122 c.24.32.13 D E E1 e e1 L N O 6.3 6.7 3.3 6.7 7.3.24.116.9.248.264.287.264 3.7.13.146 2.3 BASIC 4.6 BASIC.91 BASIC.181 BASIC.75 1.1.3.43 3 3 1 1 SCALE 2.5 EUROPEAN PROJECTION 2.5 ISSUE DATE 242216 REVISION 1 5mm Figure1OutlinePGSOT223,dimensionsinmm/inches 11
7AppendixA Table11RelatedLinks IFXCoolMOSWebpage:www.infineon.com IFXDesigntools:www.infineon.com 12
RevisionHistory Revision:216429,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) 2. 216429 Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL3,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust215 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany 216InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 13
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