MOSFET IPS60R1K5CE. 600VCoolMOSªCEPowerTransistor
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1 MOSFET CoolMOS isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyinfineontechnologies.coolmos CEisa priceperformanceoptimizedplatformenablingtotargetcostsensitive applicationsinconsumerandlightingmarketsbystillmeetinghighest efficiencystandards.thenewseriesprovidesallbenefitsofafast switchingsuperjunctionmosfetwhilenotsacrificingeaseofuseand offeringthebestcostdownperformanceratioavailableonthemarket. IPAKSL tab Features ExtremelylowlossesduetoverylowFOMRdson*QgandEoss Veryhighcommutationruggedness Easytouse/drive Pbfreeplating,Halogenfreemoldcompound Qualifiedforstandardgradeapplications Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.pcsilverbox,adapter,lcd&pdptvandindoorlighting. Gate Pin 1 Drain Pin 2, Tab Source Pin Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate orseparatetotempolesisgenerallyrecommended. Table1KeyPerformanceParameters Parameter Value Unit Tj,max 6 V RDS(on),max 1 mω Id. A Qg.typ 9.4 nc ID,pulse 8 A Eoss@4V 1 µj Type/OrderingCode Package Marking RelatedLinks PGTO 21 6S1KCE see Appendix A 1
2 TableofContents Description Maximum ratings Thermal characteristics Electrical characteristics Electrical characteristics diagrams Test Circuits Package Outlines Appendix A Revision History Trademarks Disclaimer
3 1Maximumratings attj=2 C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Continuous drain current 1) ID.2 A TC=2 C TC=1 C Pulsed drain current 2) ID,pulse 8 A TC=2 C Avalanche energy, single pulse EAS 26 mj ID=.6A; VDD=V; see table 11 Avalanche energy, repetitive EAR.9 mj ID=.6A; VDD=V; see table 11 Avalanche current, repetitive IAR.6 A MOSFET dv/dt ruggedness dv/dt V/ns VDS=...48V Gate source voltage (static) VGS 2 2 V static; Gate source voltage (dynamic) VGS V AC (f>1 Hz) Power dissipation TO21 Ptot 49 W TC=2 C Storage temperature Tstg 4 1 C Operating junction temperature Tj 4 1 C Continuous diode forward current IS. A TC=2 C Diode pulse current 2) IS,pulse 8 A TC=2 C Reverse diode dv/dt ) dv/dt 1 V/ns VDS=...4V,ISD<=IS,Tj=2 C see table 9 Maximum diode commutation speed dif/dt A/µs VDS=...4V,ISD<=IS,Tj=2 C see table 9 2Thermalcharacteristics TableThermalcharacteristicsTO21 Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Thermal resistance, junction case RthJC 2.7 C/W Thermal resistance, junction ambient RthJA 62 C/W leaded Soldering temperature, wavesoldering only allowed at leads Tsold 26 C 1.6mm (.6 in.) from case for 1s 1) Limited by Tj max. Maximum duty cycle D=. 2) Pulse width tp limited by Tj,max ) IdenticallowsideandhighsideswitchwithidenticalRG
4 Electricalcharacteristics attj=2 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Values Min. Typ. Max. Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 6 V VGS=V,ID=.2mA Gate threshold voltage V(GS)th 2... V VDS=VGS,ID=.9mA Zero gate voltage drain current IDSS 1 1 µa VDS=6,VGS=V,Tj=2 C VDS=6,VGS=V,Tj=1 C Gatesource leakage current IGSS 1 na VGS=2V,VDS=V Drainsource onstate resistance RDS(on) Ω VGS=1V,ID=1.1A,Tj=2 C VGS=1V,ID=1.1A,Tj=1 C Gate resistance RG 14 Ω f=1mhz,opendrain TableDynamiccharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Input capacitance Ciss 2 pf VGS=V,VDS=1V,f=1MHz Output capacitance Coss 16 pf VGS=V,VDS=1V,f=1MHz Effective output capacitance, energy related 1) Co(er) 11 pf VGS=V,VDS=...48V Effective output capacitance, time related 2) Co(tr) 41. pf ID=constant,VGS=V,VDS=...48V Turnon delay time td(on) 8 ns Rise time tr 7 ns Turnoff delay time td(off) 4 ns Fall time tf 2 ns VDD=4V,VGS=1V,ID=1.4A, RG=12.2Ω;seetable1 VDD=4V,VGS=1V,ID=1.4A, RG=12.2Ω;seetable1 VDD=4V,VGS=1V,ID=1.4A, RG=12.2Ω;seetable1 VDD=4V,VGS=1V,ID=1.4A, RG=12.2Ω;seetable1 Table6Gatechargecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Gate to source charge Qgs 1.1 nc VDD=48V,ID=1.4A,VGS=to1V Gate to drain charge Qgd nc VDD=48V,ID=1.4A,VGS=to1V Gate charge total Qg 9.4 nc VDD=48V,ID=1.4A,VGS=to1V Gate plateau voltage Vplateau.4 V VDD=48V,ID=1.4A,VGS=to1V 1) Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%Vo(BR)DSS 2) Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfromto8%Vo(BR)DSS 4
5 Table7Reversediodecharacteristics Values Parameter Symbol Unit Note/TestCondition Min. Typ. Max. Diode forward voltage VSD.9 V VGS=V,IF=1.4A,Tj=2 C Reverse recovery time trr 2 ns Reverse recovery charge Qrr 1.1 µc Peak reverse recovery current Irrm 9.8 A VR=4V,IF=1.4A,diF/dt=1A/µs; see table 9 VR=4V,IF=1.4A,diF/dt=1A/µs; see table 9 VR=4V,IF=1.4A,diF/dt=1A/µs; see table 9
6 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation(NonFullPAK) Diagram2:Safeoperatingarea(NonFullPAK) µs 4 1 µs 4 1 DC 1 ms 1 µs Ptot[W] 2 ID[A] TC[ C] Ptot=f(TC) VDS[V] ID=f(VDS);TC=2 C;D=;parameter:tp Diagram:Safeoperatingarea(NonFullPAK) 1 1 Diagram4:Max.transientthermalimpedance(NonFullPAK) µs 1 µs 1 1 ms 1 µs. ID[A] 1 1 DC ZthJC[K/W] single pulse VDS[V] ID=f(VDS);TC=8 C;D=;parameter:tp tp[s] ZthJC=f(tP);parameter:D=tp/T 6
7 Diagram:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics V 2 V 8 V 8 V 1 V 2 V V ID[A] 4 7 V ID[A] 6 V 6 V 2. V 2. V V 1 V 4. V 1 4. V VDS[V] ID=f(VDS);Tj=2 C;parameter:VGS VDS[V] ID=f(VDS);Tj=12 C;parameter:VGS Diagram7:Typ.drainsourceonstateresistance Diagram8:Drainsourceonstateresistance 4... RDS(on)[Ω] V.V 6V 6. V 7 V 1 V RDS(on)[Ω] % typ ID[A] RDS(on)=f(ID);Tj=12 C;parameter:VGS Tj[ C] RDS(on)=f(Tj);ID=1.1A;VGS=1V 7
8 Diagram9:Typ.transfercharacteristics 9 Diagram1:Typ.gatecharge C V 48 V ID[A] 4 1 C VGS[V] VGS[V] ID=f(VGS);VDS=2V;parameter:Tj Qgate[nC] VGS=f(Qgate);ID=1.4Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode C 12 C Diagram12:Avalancheenergy IF[A] EAS[mJ] VSD[V] IF=f(VSD);parameter:Tj Tj[ C] EAS=f(Tj);ID=.6A;VDD=V 8
9 Diagram1:Drainsourcebreakdownvoltage 7 Diagram14:Typ.capacitances Ciss VBR(DSS)[V] 62 6 C[pF] Coss Crss Tj[ C] VBR(DSS)=f(Tj);ID=.2mA VDS[V] C=f(VDS);VGS=V;f=1MHz Diagram1:Typ.Cossstoredenergy Eoss[µJ] VDS[V] Eoss=f(VDS) 9
10 TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform R g 1 V,I (peak) R g 2 I F di F / dt t F t rr t S I F t I F R g 1 = R g 2 I rrm Q F Q S di rr / dt 1 %I rrm t rr =t F +t S Q rr = Q F +Q S Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform 9% V GS V GS 1% t d(on) t r t d(off) t f t on t off Table1Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V (BR)DS I D I D 1
11 11 6PackageOutlines DIM A ISSUE DATE EUROPEAN PROJECTION MILLIMETERS MIN MAX.. MIN INCHES MAX SCALE 4mm DOCUMENT NO. Z8B29 REVISION A1 b b2 b4 c c2 D D1 E E1 e e1 N L L1 L2 4.9 Figure1OutlinePGTO21,dimensionsinmm/inches
12 7AppendixA Table11RelatedLinks IFXCoolMOS TM CEWebpage: IFXCoolMOS TM CEapplicationnote: IFXCoolMOS TM CEsimulationmodel: IFXDesigntools: 12
13 RevisionHistory Revision:216226,Rev.2. Previous Revision Revision Date Subjects (major changes since last revision) Release of final version TrademarksofInfineonTechnologiesAG AURIX,C166,CanPAK,CIPOS,CoolGaN,CoolMOS,CoolSET,CoolSiC,CORECONTROL,CROSSAVE,DAVE,DIPOL,DrBlade, EasyPIM,EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,HITFET,HybridPACK,Infineon, ISOFACE,IsoPACK,iWafer,MIPAQ,ModSTACK,myd,NovalithIC,OmniTune,OPTIGA,OptiMOS,ORIGA,POWERCODE, PRIMARION,PrimePACK,PrimeSTACK,PROFET,PROSIL,RASIC,REAL,ReverSave,SatRIC,SIEGET,SIPMOS,SmartLEWIS, SOLIDFLASH,SPOC,TEMPFET,thinQ,TRENCHSTOP,TriCore. TrademarksupdatedAugust21 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: Publishedby InfineonTechnologiesAG 81726München,Germany 216InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice( Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 1
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