Technische Information / technical information
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1 s Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage T vj = 25 C V CES 1 V Kollektor Dauergleichstrom DC collector current T c = 8 C T c = 25 C I C, nom A I C 48 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t p = 1ms, T c = 8 C I CRM A Gesamt Verlustleistung total power dissipation T c = 25 C P tot 147 W Gate Emitter Spitzenspannung gate emitter peak voltage V GES +/ 2 V Dauergleichstrom DC forward current I F A Periodischer Spitzenstrom repetitive peak forward current t p = 1ms I FRM A Grenzlastintegral I²t value V R = V, t p = 1ms, T vj = 125 C I²t 19 ka²s Isolations Prüfspannung insulation test voltage RMS, f= 5Hz, t= 1min V ISOL 2,5 kv Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Kollektor Emitter Sättigungsspannung V GE = 15V, T vj = 25 C, I C = I C,nom collector emitter saturation voltage V GE = 15V, T vj = 125 C, I C = I C,nom V CEsat min. typ. max. 1,7 2,15 V 2 V Gate Schwellenspannung gate threshold voltage V CE = V GE, T vj = 25 C, I C = 12mA V GE(th) 5 5,8 6,5 V Gateladung gate charge V GE = 15V...+15V Q G 2,8 µc Eingangskapazität input capacitance f= 1MHz, T vj = 25 C, V CE = 25V, V GE = V C ies 21 nf Rückwirkungskapazität reverse transfer capacitance f= 1MHz, T vj = 25 C, V CE = 25V, V GE = V C res,85 nf Kollektor Emitter Reststrom collector emitter cut off current V CE = 1V, V GE = V, T vj = 25 C I CES 5 ma Gate Emitter Reststrom gate emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES na prepared by: Mark Münzer date of publication: 2328 approved: Martin Hierholzer revision: 3 1 (8).xls 2328
2 s Charakteristische Werte / characteristic values Transistor Wechselrichter / transistor inverter Einschaltverzögerungszeit (induktive Last) turn on delay time (inductive load) Anstiegszeit (induktive Last) rise time (inductive load) Abschaltverzögerungszeit (induktive Last) turn off delay time (inductive load) Fallzeit (induktive Last) fall time (inductive load) Einschaltverlustenergie pro Puls turn on energy loss per pulse Ausschaltverlustenergie pro Puls turn off energy loss per pulse I C = I C, nom, V CC = V V GE = ±15V, R G = 2,4Ω, T vj = 25 C I C = I C, nom, V CC = V V GE = ±15V, R G = 2,4Ω, T vj = 25 C I C = I C, nom, V CC = V V GE = ±15V, R G = 2,4Ω, T vj = 25 C I C = I C, nom, V CC = V V GE = ±15V, R G = 2,4Ω, T vj = 25 C I C = I C, nom, V CC = V, L σ = 8nH I C = I C, nom, V CC = V, L σ = 8nH Kurzschlussverhalten t P 1µsec, V GE 15V, T Vj 125 C SC data V CC = 9V, V CEmax = V CES L σce di/dt t d,on t r t d,off t f E on E off I SC min. typ. max. 25 ns ns 9 ns 95 ns 55 ns 65 ns 13 ns 18 ns 25 mj 44 mj 1 A Modulinduktivität stray inductance module L σce 2 nh Leitungswiderstand, AnschlussChip lead resistance, terminalchip T c = 25 C R CC /EE,7 mω Charakteristische Werte / characteristic values Inversdiode / freewheel diode Durchlassspannung I F = I C, nom, V GE = V, T vj = 25 C forward voltage I F = I C, nom, V GE = V, T vj = 125 C V F 1,65 2,15 V 1,65 V Rückstromspitze peak reverse recovery current I F =I C,nom, di F /dt= A/µs V R = V, V GE = 15V, T vj = 25 C V R = V, V GE = 15V, T vj = 125 C I RM 21 A 27 A Sperrverzögerungsladung recoverred charge I F =I C,nom, di F /dt= A/µs V R = V, V GE = 15V, T vj = 25 C V R = V, V GE = 15V, T vj = 125 C Q r 3 µc 56 µc Ausschaltenergie pro Puls reverse recovery energy I F =I C,nom, di F /dt= A/µs V R = V, V GE = 15V, T vj = 25 C V R = V, V GE = 15V, T vj = 125 C E rec 14 mj 26 mj 2 (8).xls 2328
3 s Charakteristische Werte / characteristic values Chopperdiode / chopper diode Durchlassspannung I F =A, V GE = V, T vj = 25 C forward voltage I F = A, V GE = V, T vj = 125 C V F 1,65 2,5 V 1,65 V Rückstromspitze peak reverse recovery current I F =A, di F /dt= A/µs V R = V, V GE = 15V, T vj = 25 C V R = V, V GE = 15V, T vj = 125 C I RM 28 A 36 A Sperrverzögerungsladung recoverred charge I F =A, di F /dt= A/µs V R = V, V GE = 15V, T vj = 25 C V R = V, V GE = 15V, T vj = 125 C Q r 4 µc 75 µc Ausschaltenergie pro Puls reverse recovery energy I F =A, di F /dt= A/µs V R = V, V GE = 15V, T vj = 25 C V R = V, V GE = 15V, T vj = 125 C E rec 18 mj 34 mj Thermische Eigenschaften / thermal properties Innerer Wärmewiderstand; DC thermal resistance, junction to case; DC Übergangs Wärmewiderstand thermal resistance, case to heatsink Transistor Wechelr. / transistor inverter Inversdiode / free wheel diode Chopper Diode / chopper diode pro Modul / per module λ Paste = 1W/m*K / λ grease = 1W/m*K R thjc R thck,85 K/W,15 K/W,125 K/W,1 K/W Höchstzulässige Sperrschichttemp. maximum junction temperature T vjmax 15 C Betriebstemperatur operation temperature T vjop C Lagertemperatur storage temperature T stg C Mechanische Eigenschaften / mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Al 2 O 3 CTI comperative tracking index 225 Anzugsdrehmoment, mech. Befestigung mounting torque screw M5 M 3 6 Nm Anzugsdrehmoment, elektr. Anschlüsse terminal connection torque terminals M6 M 2,5 5 Nm Gewicht weight G 42 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid with the belonging technical notes. 3 (8).xls 2328
4 s Ausgangskennlinie (typisch) I C = f(v CE ) output characteristic (typical) V GE = 15V Tvj = 25 C Tvj = 125 C,,5 1, 1,5 2, 2,5 3, 3,5 V CE [V] Ausgangskennlinienfeld (typisch) I C = f(v CE ) output characteristic (typical) T vj = 125 C VGE=19V VGE=17V VGE=15V VGE=13V VGE=11V VGE=9V,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 4 (8).xls 2328
5 s Übertragungscharakteristik (typisch) transfer characteristic (typical) I C = f(v GE ) V CE = 2V Tvj=25 C Tvj=125 C V GE [V] Durchlasskennlinie der Dioden (typisch) I F = f(v F ) forward caracteristic of diodes (typical) Tvj = 25 C 7 I F [A] of inverse diode Tvj = 125 C I F [A] of chopper diode 75,,2,4,6,8 1, 1,2 1,4 1,6 1,8 2, 2,2 2,4 V F [V] 5 (8).xls 2328
6 s Schaltverluste (typisch) Switching losses (typical) E on = f (I C ), E off = f (I C ), E rec = f (I C ) V GE =15V, R gon =R goff =2,4Ω, V CE =V, T vj =125 C Eon FF Eoff FFZ Erec FF 6 E [mj] Schaltverluste (typisch) Switching losses (typical) E on = f (R G ), E off = f (R G ), E rec = f (R G ) V GE =15V, I C =A, V CE =V, T vj =125 C Eon Eoff Erec 12 E [mj] RG [Ω] 6 (8).xls 2328
7 s Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t) 1 Z thjc [K/W],1,1 Zth : IGBT Zth : Inversdiode Zth : Diode Chopper,1,1,1,1 1 t [s] i r i [K/kW] : IGBT 35,73 42,82 4,84 1,61 τ i [s] : IGBT 6,499E2 2,61E2 2,364E3 1,187E5 r i [K/kW] : Inversdiode 62,99 75,66 8,52 2,83 τ i [s] : Inversdiode 6,499E2 2,61E2 2,364E3 1,187E5 r i [K/kW] : Chopper Diode 52,51 63,2 7,1 2,37 τ i [s] : Chopper Diode 6,499E2 2,61E2 2,364E3 1,187E5 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) V GE =15V, T j =125 C, R G =2,4Ω 7 IC,Chip IC,Modul V CE [V] 7 (8).xls 2328
8 s Gehäusemaße / Schaltbild Package outline / Circuit diagram Kriechstrecke creepage distance Luftstrecke clearance 2 mm 11 mm 8 (8).xls 2328
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