BSM50GD120DLC. Technische Information / Technical Information. Höchstzulässige Werte / Maximum rated values
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1 s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage V CES V Kollektor-Dauergleichstrom T C = C I C,nom. 5 A DC-collector current T C = 25 C I C 85 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t P = 1 ms, T C = C I CRM A Gesamt-Verlustleistung total power dissipation T C =25 C, Transistor P tot 35 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES +/- V V Dauergleichstrom DC forward current I F 5 A Periodischer Spitzenstrom repetitive peak forw. current t P = 1 ms I FRM A Grenzlastintegral der Diode I 2 t - value, Diode Isolations-Prüfspannung insulation test voltage V R = V, t p = ms, T Vj = 125 C I 2 t 43 A 2 s RMS, f = 5 Hz, t = 1 min. V ISOL 2,5 kv Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung I C = 5A, V GE = 15V, T vj = 25 C V CE sat - 2,1 2,6 V collector-emitter saturation voltage I C = 5A, V GE = 15V, T vj = 125 C - 2,4 2,9 V Gate-Schwellenspannung gate threshold voltage I C = 2mA, V CE = V GE, T vj = 25 C V GE(th) 4,5 5,5 6,5 V Gateladung gate charge V GE = -15V...+15V Q G -,53 - µc Eingangskapazität input capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C ies - 3,3 - nf Rückwirkungskapazität reverse transfer capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C res -,21 - nf Kollektor-Emitter Reststrom V CE = V, V GE = V, T vj = 25 C I CES µa collector-emitter cut-off current V CE = V, V GE = V, T vj = 125 C - - µa Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = V, T vj = 25 C I GES - - na prepared by: Mark Münzer date of publication: approved by: M. Hierholzer revision: 2 1(8) Seriendatenblatt_.xls
2 s Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) I C = 5A, V CC = V turn on delay time (inductive load) V GE = ±15V, R G = 15Ω, T vj = 25 C t d,on -,5 - µs V GE = ±15V, R G = 15Ω, T vj = 125 C -,6 - µs Anstiegszeit (induktive Last) I C = 5A, V CC = V rise time (inductive load) V GE = ±15V, R G = 15Ω, T vj = 25 C t r -,5 - µs V GE = ±15V, R G = 15Ω, T vj = 125 C -,5 - µs Abschaltverzögerungszeit (ind. Last) I C = 5A, V CC = V turn off delay time (inductive load) V GE = ±15V, R G = 15Ω, T vj = 25 C t d,off -,25 - µs V GE = ±15V, R G = 15Ω, T vj = 125 C -,3 - µs Fallzeit (induktive Last) I C = 5A, V CC = V fall time (inductive load) V GE = ±15V, R G = 15Ω, T vj = 25 C t f -,3 - µs V GE = ±15V, R G = 15Ω, T vj = 125 C -,7 - µs Einschaltverlustenergie pro Puls I C = 5A, V CC = V, V GE = 15V turn-on energy loss per pulse R G = 15Ω, T vj = 125 C, L S = 1nH E on - 6,4 - mws Abschaltverlustenergie pro Puls I C = 5A, V CC = V, V GE = 15V turn-off energy loss per pulse R G = 15Ω, T vj = 125 C, L S = 1nH E off - 6,2 - mws Kurzschlußverhalten t P µsec, V GE 15V, R G = 15Ω SC Data T Vj 125 C, V CC =9V, V CEmax =V CES -L sce di/dt I SC - - A Modulinduktivität stray inductance module L sce - - nh Modul Leitungswiderstand, Anschlüsse Chip module lead resistance, terminals chip T C =25 C R CC +EE - 4,4 - mω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung I F = 5A, V GE = V, T vj = 25 C V F - 1,8 2,3 V forward voltage I F = 5A, V GE = V, T vj = 125 C - 1,7 2,2 V Rückstromspitze I F = 5A, - di F /dt = 13A/µsec peak reverse recovery current V R = V, VGE = -15V, T vj = 25 C I RM A V R = V, VGE = -15V, T vj = 125 C A Sperrverzögerungsladung I F = 5A, - di F /dt = 13A/µsec recovered charge V R = V, VGE = -15V, T vj = 25 C Q r - 5,1 - µas V R = V, VGE = -15V, T vj = 125 C -,7 - µas Abschaltenergie pro Puls I F = 5A, - di F /dt = 13A/µsec reverse recovery energy V R = V, VGE = -15V, T vj = 25 C E rec - 1,9 - mws V R = V, VGE = -15V, T vj = 125 C mws 2(8) Seriendatenblatt_.xls
3 s Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC R thjc - -,35 K/W thermal resistance, junction to case Diode/Diode, DC - -,7 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λ Paste = 1 W/m * K / λ grease = 1 W/m * K R thck -,2 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj C Betriebstemperatur operation temperature T op C Lagertemperatur storage temperature T stg C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation AL 2 O 3 CTI comperative tracking index 225 Anzugsdrehmoment f. mech. Befestigung M1 3 6 Nm mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminals M6 M2 Nm terminal connection torque Gewicht weight G 1 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) Seriendatenblatt_.xls
4 s 9 Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V 7 Tj = 25 C Tj = 125 C 5 3,,5 1, 1,5 2, 2,5 3, 3,5 4, V CE [V] Ausgangskennlinienfeld (typisch) I C = f (V CE ) Output characteristic (typical) T vj = 125 C VGE = 17V VGE = 15V VGE = 13V VGE = 11V VGE = 9V VGE = 7V 3,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, V CE [V] 4(8) Seriendatenblatt_.xls
5 s 9 Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = V Tj = 25 C Tj = 125 C V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) 9 Tj = 25 C Tj = 125 C 7 I F [A] 5 3,,5 1, 1,5 2, 2,5 3, V F [V] 5(8) Seriendatenblatt_.xls
6 s 18 Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) V GE =15V, R gon = R goff = 15 Ω, V CE = V, T j = 125 C Eoff Eon Erec 12 E [mj] Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) V GE =15V, I C = 5A, V CE = V, T j = 125 C Eoff Eon Erec E [mj] R G [Ω] 6(8) Seriendatenblatt_.xls
7 s 1 Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t),1 Z thjc [K / W],1 Zth:Diode Zth:IGBT,1,1,1,1 1 t [sec] i r i [K/kW] : IGBT 68,32 229,97 18,25 33,46 τ i [sec] : IGBT,9,45,73,229 r i [K/kW] : Diode 41,46 35,3 271,51 81,73 τ i [sec] : Diode,3,22,64,344 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) V GE = 15V, R g = 15 Ohm, T vj = 125 C 1 IC,Modul IC,Chip V CE [V] 7(8) Seriendatenblatt_.xls
8 s 8(8) Seriendatenblatt_.xls
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s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung T j = 25 C V CES 3 V collector-emitter voltage T j = -25 C 3 Kollektor-Dauergleichstrom
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s Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage T vj = 25 C V CES 1 V Kollektor Dauergleichstrom
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s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage T vj =125 C T vj =25 C T vj =-4 C V CES 65 63
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