MOSFET SOT34 Features PChannel VerylowonresistanceRDS(on)@VGS=4.5V 100%avalanchetested LogicLevel Enhancementmode Pbfreeleadplating;RoHScompliant HalogenfreeaccordingtoIEC61491 1 3 4 Productvalidation FullyqualifiedaccordingtoJEDECforIndustrialApplications Table1KeyPerformanceParameters Parameter Value Unit VDS 60 V RDS(on),max 750 mω ID 1.1 A Gate Pin 1 Drain Pin, 4 Source Pin 3 Type/OrderingCode Package Marking RelatedLinks PGSOT3 75DP06LM 1 Rev..0,019035
TableofContents Description............................................................................. 1 Maximum ratings........................................................................ 3 Thermal characteristics.................................................................... 3 Electrical characteristics................................................................... 4 Electrical characteristics diagrams........................................................... 6 Package Outlines....................................................................... 10 Revision History........................................................................ 11 Trademarks........................................................................... 11 Disclaimer............................................................................ 11 Rev..0,019035
1Maximumratings atta=5 C,unlessotherwisespecified TableMaximumratings Parameter Symbol Unit Note/TestCondition Continuous drain current 1) ID 1.1 A Continuous drain current 1) ID 0.7 1.0 0.6 Pulsed drain current ) ID,pulse 4.4 A TA=5 C A VGS=10V,TA=5 C, RTHJA=70 C/W VGS=10V,TA=100 C, RTHJA=70 C/W VGS=4.5V,TA=5 C, RTHJA=70 C/W VGS=4.5V,TA=100 C, RTHJA=70 C/W Avalanche energy, single pulse 3) EAS 36 mj ID=1.1A,RGS=5Ω Gate source voltage VGS 0 0 V Power dissipation Ptot Operating and storage temperature Tj,Tstg 55 150 C 4. 1.8 W TS=5 C TA=5 C,RTHJA=70 C/W 1) IEC climatic category; DIN IEC 681: 55/150/56 Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Unit Note/TestCondition Thermal resistance, junction soldering point RthJS 30 C/W Device on PCB, 6 cm² cooling area 1) RthJA 70 C/W 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. ) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 3 Rev..0,019035
3Electricalcharacteristics attj=5 C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Unit Note/TestCondition Drainsource breakdown voltage V(BR)DSS 60 V VGS=0V,ID=50µA Gate threshold voltage VGS(th) 1 1.5 V VDS=VGS,ID=77µA Zero gate voltage drain current IDSS 0.1 10 1 100 µa VDS=60V,VGS=0V,Tj=5 C VDS=60V,VGS=0V,Tj=15 C Gatesource leakage current IGSS 10 100 na VGS=0V,VDS=0V Drainsource onstate resistance RDS(on) 61 748 750 1000 Gate resistance RG 75 Ω mω VGS=10V,ID=1.1A VGS=4.5V,ID=1A Transconductance gfs 1.8 S VDS ID RDS(on)max,ID=1.1A Table5Dynamiccharacteristics Parameter Symbol Unit Note/TestCondition Input capacitance Ciss 10 pf VGS=0V,VDS=30V,f=1MHz Output capacitance Coss 19 pf VGS=0V,VDS=30V,f=1MHz Reverse transfer capacitance Crss 5 pf VGS=0V,VDS=30V,f=1MHz Turnon delay time td(on) 3 ns Rise time tr 5 ns Turnoff delay time td(off) 40 ns Fall time tf 14 ns VDD=30V,VGS=10V,ID=1.1A, RG,ext=1.6Ω VDD=30V,VGS=10V,ID=1.1A, RG,ext=1.6Ω VDD=30V,VGS=10V,ID=1.1A, RG,ext=1.6Ω VDD=30V,VGS=10V,ID=1.1A, RG,ext=1.6Ω Table6Gatechargecharacteristics 1) Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs 0.4 nc VDD=30V,ID=1.1A,VGS=0to10V Gate charge at threshold Qg(th) 0. nc VDD=30V,ID=1.1A,VGS=0to10V Gate to drain charge Qgd 1.1 nc VDD=30V,ID=1.1A,VGS=0to10V Switching charge Qsw 1.3 nc VDD=30V,ID=1.1A,VGS=0to10V Gate charge total Qg 4.0 nc VDD=30V,ID=1.1A,VGS=0to10V Gate plateau voltage Vplateau 3.4 V VDD=30V,ID=1.1A,VGS=0to10V Output charge Qoss 1.3 nc VDD=30V,VGS=0V 1) See Gate charge waveforms for parameter definition 4 Rev..0,019035
Table7Reversediode Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS 1.1 A TA=5 C Diode pulse current IS,pulse 4.4 A TA=5 C Diode forward voltage VSD 0.9 1. V VGS=0V,IF=1.1A,Tj=5 C Reverse recovery time trr 3 ns VR=30V,IF=1.1A,diF/dt=100A/µs Reverse recovery charge Qrr 7 nc VR=30V,IF=1.1A,diF/dt=100A/µs 5 Rev..0,019035
4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram:Draincurrent 1. 1.0 0.8 Ptot[W] 1 ID[A] 0.6 0.4 0. 0 0 0 40 60 80 100 10 140 160 TA[ C] Ptot=f(TA) 0.0 0 0 40 60 80 100 10 140 160 TA[ C] ID=f(TA); VGS 10V Diagram3:Safeoperatingarea 10 1 Diagram4:Max.transientthermalimpedance 10 1 µs 100 µs 0.5 10 0 1 ms 10 1 0. 0.1 ID[A] 10 1 100 ms DC 10 ms ZthJA[K/W] 10 0 0.05 0.0 0.01 10 single pulse 10 3 10 1 10 0 10 1 10 VDS[V] ID=f(VDS);TA=5 C;D=0;parameter:tp 10 1 10 5 10 4 10 3 10 10 1 10 0 10 1 tp[s] ZthJA=f(tp);parameter:D=tp/T 6 Rev..0,019035
Diagram5:Typ.outputcharacteristics 5 Diagram6:Typ.drainsourceonresistance 1500 10 V 4 5 V 4.5 V 150.8 V 3 V 3.5 V ID[A] 3 4 V 3.5 V RDS(on)[mΩ] 1000 4 V 4.5 V 5 V 1 3 V.8 V 750 10 V 0 0 1 3 4 5 VDS[V] ID=f(VDS),Tj=5 C;parameter:VGS 500 0.0 0.4 0.8 1. 1.6.0.4 ID[A] RDS(on)=f(ID),Tj=5 C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.drainsourceonresistance 3 5 C 150 C 000 1750 1500 150 150 C ID[A] 1 RDS(on)[mΩ] 1000 750 5 C 500 50 0 1 3 4 5 VGS[V] ID=f(VGS), VDS > ID RDS(on)max;parameter:Tj 0 4 5 6 7 8 9 10 VGS[V] RDS(on)=f(VGS),ID=1.1A;parameter:Tj 7 Rev..0,019035
Diagram9:Normalizeddrainsourceonresistance.00 Diagram10:Typ.gatethresholdvoltage.00 1.75 RDS(on)(normalizedto5 C) 1.50 1.5 1.00 0.75 0.50 VGS(th)[V] 1.75 1.50 1.5 770 µa 0.5 0.00 75 50 5 0 5 50 75 100 15 150 Tj[ C] RDS(on)=f(Tj),ID=1.1A,VGS=10V 77 µa 1.00 75 50 5 0 5 50 75 100 15 150 Tj[ C] VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances 10 3 Diagram1:Forwardcharacteristicsofreversediode 10 1 5 C 5 C, max 150 C 150 C, max 10 Ciss 10 0 C[pF] Coss IF[A] 10 1 10 1 Crss 10 0 0 10 0 30 40 50 60 VDS[V] C=f(VDS);VGS=0V;f=1MHz 10 0.00 0.5 0.50 0.75 1.00 1.5 1.50 VSD[V] IF=f(VSD);parameter:Tj 8 Rev..0,019035
Diagram13:Avalanchecharacteristics 10 1 Diagram14:Typ.gatecharge 10 1 V 30 V 48 V 8 10 0 5 C 6 IAV[A] 10 1 100 C 15 C VGS[V] 4 10 10 0 10 1 10 10 3 tav[µs] IAS=f(tAV);RGS=5Ω;parameter:Tj,start 0 0.0 0.5 1.0 1.5.0.5 3.0 3.5 4.0 Qgate[nC] VGS=f(Qgate),ID=1.1Apulsed,Tj=5 C;parameter:VDD Diagram15:Drainsourcebreakdownvoltage 70 Diagram Gate charge waveforms 65 VBR(DSS)[V] 60 55 75 50 5 0 5 50 75 100 15 150 Tj[ C] VBR(DSS)=f(Tj);ID=50µA 9 Rev..0,019035
5PackageOutlines Figure1OutlinePGSOT3,dimensionsinmm/inches 10 Rev..0,019035
RevisionHistory Revision:019035,Rev..0 Previous Revision Revision Date Subjects (major changes since last revision).0 019035 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 8176München,Germany 018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ( Beschaffenheitsgarantie ). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,infineontechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnoninfringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer sproductsandanyuseofthe productofinfineontechnologiesincustomer sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestinfineontechnologiesoffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlifesupportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofinfineontechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlifesupport,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 11 Rev..0,019035