s Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung T j = 25 C V CES 3 V collector-emitter voltage T j = -25 C 3 Kollektor-Dauergleichstrom T C = 8 C I C,nom. A DC-collector current T C = 25 C I C 66 A Periodischer Kollektor Spitzenstrom repetitive peak collector current t P = 1 ms, T C = 8 C I CRM A Gesamt-Verlustleistung total power dissipation T C =25 C, Transistor P tot 4,8 kw Gate-Emitter-Spitzenspannung gate-emitter peak voltage V GES +/- 2V V Dauergleichstrom DC forward current I F A Periodischer Spitzenstrom repetitive peak forw. current t P = 1 ms I FRM A Grenzlastintegral der Diode I 2 t - value, Diode Spitzenverlustleistung der Diode maximum power dissipation diode V R = V, t p = 1ms, T Vj = 125 C I 2 t 55. A 2 s T j = 125 C P RQM kw Isolations-Prüfspannung insulation test voltage RMS, f = 5 Hz, t = 1 min. V ISOL 6. V Teilentladungs-Aussetzspannung partial discharge extinction voltage RMS, f = 5 Hz, Q PD 1 pc (acc. to IEC 1287) V ISOL 2. V Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung I C = A, V GE = 15V, Tvj = 25 C V CE sat - 3,4 4,25 V collector-emitter saturation voltage I C = A, V GE = 15V, T vj = 125 C - 4,3 5, V Gate-Schwellenspannung gate threshold voltage I C = 4 ma, V CE = V GE, T vj = 25 C V GE(th) 4,2 5,1 6, V Eingangskapazität input capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C ies - 5 - nf Rückwirkungskapazität reverse transfer capacitance f = 1MHz,T vj = 25 C,V CE = 25V, V GE = V C res - 2,7 - nf Gateladung gate charge V GE = -15V... + 15V, V CE = 1V Q G - 8 - µc Kollektor-Emitter Reststrom V CE = 3V, V GE = V, T vj = 25 C I CES -,5 4 ma collector-emitter cut-off current V CE = 3V, V GE = V, T vj = 125 C - 2 5 ma Gate-Emitter Reststrom gate-emitter leakage current V CE = V, V GE = 2V, T vj = 25 C I GES - - na prepared by: Jürgen Göttert date of publication : 8.6.99 approved by: Chr. Lübke; revision: 2 1 (9)
s Charakteristische Werte / Characteristic values Transistor / Transistor min. typ. max. Einschaltverzögerungszeit (ind. Last) I C = A, V CC = 1V turn on delay time (inductive load) V GE = ±15V, R G = 3,6 Ω, C GE = 68nF, T vj = 25 C t d,on - 37 - ns V GE = ±15V, R G = 3,6 Ω, C GE = 68nF, T vj = 125 C - 35 - ns Anstiegszeit (induktive Last) I C = A, V CC = 1V rise time (inductive load) V GE = ±15V, R G = 3,6 Ω, C GE = 68nF, T vj = 25 C t r - 25 - ns V GE = ±15V, R G = 3,6 Ω, C GE = 68nF, T vj = 125 C - 27 - ns Abschaltverzögerungszeit (ind. Last) I C = A, V CC = 1V turn off delay time (inductive load) V GE = ±15V, R G = 3,6 Ω, C GE = 68nF, T vj = 25 C t d,off - 155 - ns V GE = ±15V, R G = 3,6 Ω, C GE = 68nF, T vj = 125 C - 1 - ns Fallzeit (induktive Last) I C = A, V CC = 1V fall time (inductive load) V GE = ±15V, R G = 3,6 Ω, C GE = 68nF, T vj = 25 C t f - - ns V GE = ±15V, R G = 3,6 Ω, C GE = 68nF, T vj = 125 C - - ns Einschaltverlustenergie pro Puls I C = A, V CC = 1V, V GE = 15V turn-on energy loss per pulse R G = 3,6 Ω, C GE = 68 nf, T vj = 125 C, L S = 6nH E on - 96 - mws Abschaltverlustenergie pro Puls I C = A, V CC = 1V, V GE = 15V turn-off energy loss per pulse R G = 3,6 Ω, C GE = 68 nf, T vj = 125 C, L S = 6nH E off - 51 - mws Kurzschlußverhalten t P 1µsec, V GE 15V SC Data T Vj 125 C, V CC =2V, V CEmax =V CES -L sce di/dt I SC - - A Modulinduktivität stray inductance module L sce - 25 - nh Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip T = 25 C R CC +EE -,37 - mω Charakteristische Werte / Characteristic values Diode / Diode min. typ. max. Durchlaßspannung I F = A, V GE = V, T vj = 25 C V F - 2,8 3,5 V forward voltage I F = A, V GE = V, T vj = 125 C - 2,8 3,5 V Rückstromspitze I F = A, - di F /dt = 1 A/µsec peak reverse recovery current V R = 1V, VGE = -1V, T vj = 25 C I RM - 33 - A V R = 1V, VGE = -1V, T vj = 125 C - 35 - A Sperrverzögerungsladung I F = A, - di F /dt = 1 A/µsec recovered charge V R = 1V, VGE = -1V, T vj = 25 C Q r - 235 - µas V R = 1V, VGE = -1V, T vj = 125 C - 44 - µas Abschaltenergie pro Puls I F = A, - di F /dt = 1 A/µsec reverse recovery energy V R = 1V, VGE = -1V, T vj = 25 C E rec - 245 - mws V R = 1V, VGE = -1V, T vj = 125 C - - mws 2 (9)
s Thermische Eigenschaften / Thermal properties min. typ. max. Innerer Wärmewiderstand Transistor / transistor, DC R thjc - -,26 K/W thermal resistance, junction to case Diode/Diode, DC - -,51 K/W Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Modul / per module λ Paste = 1 W/m*K / λ grease = 1 W/m*K R thck -,6 - K/W Höchstzulässige Sperrschichttemperatur maximum junction temperature T vj - - 15 C Betriebstemperatur operation temperature T op -4-125 C Lagertemperatur storage temperature T stg -4-125 C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Material Modulgrundplatte material of module baseplate AlSiC Innere Isolation internal insulation AlN Kriechstrecke creepage distance 32,2 mm Luftstrecke clearance 19,1 mm CTI comperative tracking index > Anzugsdrehmoment f. mech. Befestigung M1 5 Nm mounting torque Anzugsdrehmoment f. elektr. Anschlüsse terminals M4 M2 2 Nm terminal connection torque terminals M8 8.. 1 Nm Gewicht weight G 1 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (9)
s Ausgangskennlinie (typisch) I C = f (V CE ) Output characteristic (typical) V GE = 15V T = 25 C T = 125 C,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, 6,5 7, V CE [V] Ausgangskennlinienfeld (typisch) I C = f (V CE ) Output characteristic (typical) T vj = 125 C VGE = 8V VGE = 9V VGE = 1V VGE = 12V VGE = 15V VGE = 2V,,5 1, 1,5 2, 2,5 3, 3,5 4, 4,5 5, 5,5 6, 6,5 7, V CE [V] 4 (9)
s Übertragungscharakteristik (typisch) I C = f (V GE ) Transfer characteristic (typical) V CE = 2V T = 25 C T = 125 C 5 6 7 8 9 1 11 12 13 V GE [V] Durchlaßkennlinie der Inversdiode (typisch) I F = f (V F ) Forward characteristic of inverse diode (typical) Tj = 25 C Tj = 125 C I F [A],,5 1, 1,5 2, 2,5 3, 3,5 4, V F [V] 5 (9)
s 3 Schaltverluste (typisch) E on = f (I C ), E off = f (I C ), E rec = f (I C ) Switching losses (typical) R G,on = 3,6 Ω, R G,off = 3,6 Ω, C GE = 68 nf, V CE = 1V, T j = 125 C Eon Eoff Erec 2 E [mj] 1 Schaltverluste (typisch) E on = f (R G ), E off = f (R G ), E rec = f (R G ) Switching losses (typical) I C = A, C GE = 68 nf, V CE = 1V, T j = 125 C 3 Eon Eoff Erec 2 E [mj] 1 5 1 15 2 25 3 35 4 45 R G [Ω] 6 (9)
s Sicherer Arbeitsbereich IGBT (RBSOA) Reverse bias safe operation area IGBT (RBSOA) T vj = 125 C R G,off = 3,6 Ω, C GE = 68 nf 9 IC,Modul IC,Chip 1 2 3 V CE [V] Sicherer Arbeitsbereich Diode (SOA) T vj = 125 C safe operation area Diode (SOA) 9 I R [A] 1 2 3 V R [V] 7 (9)
s Transienter Wärmewiderstand Transient thermal impedance Z thjc = f (t),1 Zth:IGBT Zth:Diode Z thjc [K / W],1,1,1,1,1 1 1 t [sec] i 1 2 3 4 r i [K/kW] : IGBT 4,76 12,98 3,86 4,4 τ i [sec] : IGBT,68,642,329 2,212 r i [K/kW] : Diode 9,34 25,47 7,57 8,63 τ i [sec] : Diode,68,642,329 2,212 8 (9)
s Gehäusemaße / Schaltbild Package outline / Circuit diagram 9 (9)